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| Advance Product Information January 7, 2004 Ka Band Low Noise Amplifier Key Features * * * * * * * TGA4507-EPU Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.86 x 0.85 x 0.1 mm (0.073 x 0.033 x 0.004 in) Primary Applications Preliminary Measured Data Bias Conditions: Vd = 3.0 V, Id = 60 mA 30 Gain & Return Loss (dB) 20 10 0 -10 -20 -30 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) * * * Point-to-Point Radio Point-to-MultiPoint Radio Ka Band VSAT Gain ORL IRL 3.0 2.5 2.0 1.5 1.0 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice Noise Figure (dB) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1 Advance Product Information January 7, 2004 TGA4507-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id 1/2Ig1/2 PIN PD T CH TM TSTG 1/ 2/ 3/ 4/ 5/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE 5V -1 TO +0.5 V 280 mA 6 mA TBD TBD 150 C 320 C -65 to 150 C 0 0 0 NOTES 2/ 2/ 3/ 3/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 6/ Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2 Advance Product Information January 7, 2004 TGA4507-EPU TABLE II DC PROBE TESTS (Ta = 25 0C, Nominal) SYMBOL VBVGD3 VP1,2,3 PARAMETER Breakdown Voltage Gate-Source Pinch-off Voltage MIN. TYP. MAX. -5 UNITS V V -0.4 Q1 is 100 um FET, Q2 is 200 um FET, Q3 is 300 um FET. TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Noise Figure, NF Output Power @ 1 dB Compression Gain, P1dB TYPICAL 3.0 60 -0.5 to 0 22 8 8 2.3 12 UNITS V mA V dB dB dB dB dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3 Advance Product Information January 7, 2004 Preliminary Measured Data Bias Conditions: Vd = 3.0 V, Id = 60 mA TGA4507-EPU 30 28 26 24 G ain (dB) 22 20 18 16 14 12 10 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Fre que ncy (GHz) 3.0 2.8 2.6 Noise Figure (dB) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Fre que ncy (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 4 Advance Product Information January 7, 2004 TGA4507-EPU Preliminary Measured Data Bias Conditions: Vd = 3.0 V, Id = 60 mA 0 -5 Input Return Loss (dB) -10 -15 -20 -25 -30 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Fre que ncy (GHz) 0 O utput Return Loss (dB) -5 -10 -15 -20 -25 -30 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Fre que ncy (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 5 Advance Product Information January 7, 2004 TGA4507-EPU Preliminary Measured Data Bias Conditions: Vd = 3.0 V, Id = 60 mA, Freq @ 30 GHz 24 21 100 95 Gain 18 Pout (dBm), Gain (dB) 15 12 9 6 3 0 -16 -14 -12 -10 Pin (dBm) -8 -6 -4 -2 90 85 80 Id (mA) Pout Ids 75 70 65 60 30 20 10 0 -10 -20 -30 -40 -50 -60 -28 -26 -24 -22 -20 Pin/tone (dBm ) -18 -16 -14 -12 OIP3 Pout/tone (dBm) Pfundamental IMD3 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 6 Advance Product Information January 7, 2004 TGA4507-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 7 Advance Product Information January 7, 2004 TGA4507-EPU Chip Assembly Diagram RF bond wires should be as short as possible GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 8 Advance Product Information January 7, 2004 TGA4507-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com 9 |
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